| 摘要 |
The method solves problems, which arises in dry etching word lines, by separating word lines and not using nitride layer on the upper part of polycrytal silicon layer. The method comprises the steps of: forming a polycrystal silicon layer on the semiconductor substrate; spreading a photoresist layer on the polycrystal silicon layer; developing the photoresist layer and forming a photoresist pattern to obtain the first word lines sequentially; spreading the photoresist layer on the resultant surface; developing the photoresist layer and forming a photoresist pattern to obtain the second word lines which are to be placed between the first word lines sequentially; and forming the first and the second word lines by etching with the photoresist patterns as mask.
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