| 摘要 |
PURPOSE:To form an excellent hetero-interface stably on the interface of a distortion quantum well semiconductor layer and a barrier layer by carrying out treatment by a gas containing sulfur before the epitaxial growth of each semiconductor layer of the quantum well semiconductor layer and the barrier layer. CONSTITUTION:Treatment by a gas containing sulfur is conducted in the formation of a distortion quantum well structure layer 3. Low-temperature plasma treatment is conducted concretely. That is, treatment by a gas comprising sulfur is performed before the epitaxy of each quantum well semiconductor layer 10 and barrier layer 11, after the epitaxy of layers as foundations in the epitaxy of these each quantum well semiconductor layer 10 and barrier layer II. At least one kind of a gas selected from S2F2, SF2, SF4, S2F10, S3Cl2, SCl2, S2Br2, SBr2, S3Br2 is used as the gas containing sulfur. |
