| 摘要 |
PURPOSE:To form a capacitor with a fully long circumferential length without increasing the required area of the capacitor excessively by reducing the short side of the capacitor, extending the longer side, and then extending onto other memory cell regions laid adjacently. CONSTITUTION:A DRAM cell is provided with an active region 101, a word line 102 for constituting the gate electrode of MOSFET, a connection hole 103 for connecting the active region 101 and a capacitor 104, a counter electrode 105 of the capacitor, and a contact hole 106 for connecting a data line 107 and an active region. The capacitor 104 with two cells which are adjacent in the direction of the data line 107 and do not share data line and contact hole is extended into these two adjacent regions. Therefore, without changing the height of the capacitor 104, a DRAM with a storage capacity approximately twice as large can be achieved, thus thinning down and highly integrating a semiconductor device. |
