| 摘要 |
PURPOSE:To provide a method for directly manufacturing a ferroelectric thin film on GaAs semiconductor substrate at a low substrate temperature and a field-effect transistor. CONSTITUTION:(100) GaAs substrate is used as a substrate 10 and Pb, La, Zr and Ti metal targets are used as targets 5, 6, 7, and 8 respectively. Argon ion beams are applied from ion source 1, 2, 3 and 4 and a dielectric thin film 9 is formed on the substrate 10. When applying charge particles or ultraviolet rays to an oxide or a metal target. Perovskite-type ferroelectric thin film is formed on GaAs substrate at 450 deg.C or less. |
