| 摘要 |
PURPOSE:To obtain a non-volatile ferroelectric memory which is easy to manufacture, has a high SN ratio, and is suitable for increasing the integration density. CONSTITUTION:A reference potential is generated by a reference potential generating section 102 based on a signal potential of logic 1, 0, and stored in a potential storage section 103. In read-out operation, a reference potential is generated in a data line of one side through a potential supplying section 104 based on a stored potential, and information is detected by comparing the reference potential with a signal potential read out in the other data line. In this constitution, since polarization inversion of a dummy cell can be evaded at the time of read-out operation, deterioration caused by fatigue of a film can be suppressed. Also, since a dummy cell having the same structure and size as a memory cell in generating the reference potential, manufacturing is made easy, dispersion of a characteristic is made small, and a highly accurate reference potential can be generated. |
