The sensor has at least two semiconducting diodes producing characteristic values for the temp. to be measured. The diodes are formed as pn junctions in a semiconducting substrate. At least one diode is a luminescent or lasing diode and the diodes are electrically and geometrically separate by trench-shaped recesses. The diodes are so arranged that their spatial geometric edge radiation characteristics overlap at least partially. The luminescent or lasing diode has its radiation set to the characteristic line setting of the diode which is coupled to it via its edge radiation.
