摘要 |
An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type semiconductor layer and said n-type semiconductor layer comprises a p-typed or n-typed ZnSe:H:M film, where M is a dopant of p-type or n-type: the amount of the H is in the range of from 1 to 4 atomic %: and said film contains crystal grain domains in a proportion of 65 to 85 vol % per unit volume; and said i-type semiconductor layer comprises a non-single crystal Si(H,F) film or a non-single crystal Si(C,Ge)(H,F) film. |
申请人 |
CANON K.K., TOKIO/TOKYO, JP |
发明人 |
NAKAGAWA, KATSUMI, NAGAHAMA-SHI SHIGA-KEN, JP;ISHIHARA, SHUNICHI, HIKONE-SHI SHIGA-KEN, JP;KANAI, MASAHIRO, TOKYO, JP;ARAO, KOZO, HIKONE-SHI SHIGA-KEN, JP;FUJIOKA, YASUSHI, NAGAHAMA-SHI SHIGA-KEN, JP;SAKAI, AKIRA, NAGAHAMA-SHI SHIGA-KEN, JP |