发明名称 |
Process for the production of an SIC mask support for radiation lithography masks. |
摘要 |
<p>The invention relates to a method of manufacturing a mask support (diaphragm) of SiC for radiation lithography masks, in which an SiC layer is deposited at least on one of the two major surfaces of a substrate in the form of a silicon single crystal wafer and the silicon single crystal wafer is removed except at an edge region by means of a selective etching step, the mask support being annealed before or after the selective etching step in an oxidizing atmosphere at a temperature in the range of 200 DEG to 1350 DEG C. for a duration of 2 to 10 h.</p> |
申请公布号 |
EP0372645(B1) |
申请公布日期 |
1995.07.26 |
申请号 |
EP19890203065 |
申请日期 |
1989.12.04 |
申请人 |
PHILIPS PATENTVERWALTUNG GMBH;PHILIPS ELECTRONICS N.V. |
发明人 |
HARMS, MARGRET;LUETHJE, HOLGER, DIPL.-ING.;MATTHIESSEN, BERND, DIPL.-ING. |
分类号 |
C23C16/01;C23C16/32;C23C16/56;C30B29/36;G03F1/22;H01L21/027;(IPC1-7):G03F1/14 |
主分类号 |
C23C16/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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