| 摘要 |
1,086,856. Transistors. FUJITSU Ltd. Oct. 5, 1964 [Oct. 3, 1963], No. 40587/64. Heading H1K. In a planar junction transistor formed by conventional impurity diffusion through oxide masking surface channel effects are largely avoided by removing the oxide masking, depositing a fine coating of impurity on the previously masked face, and forming a new oxide coating over it at a temperature lower than that used in the diffusion processes. In the embodiment, in which a PNP transistor is formed by successive diffusions of phosphorus and boron into a P-type wafer, the oxide layers are all formed by heating in an atmosphere containing steam. The fine coating is of boron and boron is also incorporated in the overlying oxide by forming this in a boron oxide impregnated vessel.
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