发明名称 |
TRANSISTOR AND ITS MAKING METHOD |
摘要 |
The method prevents some degradations such as puchthrough from occuring by making the lengh of gate longer than that of effective channel. The method comprises the steps of: forming source and draing regions on the semiconductor substrate; forming a channel region whose surface is uneven between the source region and the draing region; and forming a gate by removing the photoresist insulating layer on the channel regions.
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申请公布号 |
KR950008258(B1) |
申请公布日期 |
1995.07.26 |
申请号 |
KR19920023432 |
申请日期 |
1992.12.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YUN, JU - YONG |
分类号 |
H01L21/336;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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