| 摘要 |
PURPOSE:To produce a highly heat conductive silicone nitride structural member with an excellent thermal conductivity and a high strength, in addition to a primary property of a silicon nitride sintered compact, and a semiconductor package using the same. CONSTITUTION:The characteristic of this highly heat conductive silicon nitride structural member comprises containing a rare earth element of 1.0-7.5wt.% calculated as its oxide and in total <=0.3wt.% of Li, Na, K, Fe, Ca, Mg, Sr, Ba, Mn and B as cationic impurity elements and having a thermal conductivity higher than 60W/m.K. It is composed of granules of the silicon nitride and an intergranular phase, where a crystalline compound phase in the intergranular phase occupies >=20%, by volume ratio, of all of the intergranular phase and has a thermal conductivity higher than 60W/m.K. Further, in a semiconductor package 9 having a ceramic base body 1 installed with a semiconductor chip 2, as lead frame 5 fixed to an installed side of the semiconductor chip 2 of the ceramics base body 1 and a bonding wire 6 electrically connecting the semiconductor chip 2 with the lead frame 5, this semiconductor package is constructed by forming the ceramic base body 1 with this highly heat conductive silicon nitride structural member. |
