| 发明名称 |
Quantum wire fabrication via photo induced evaporation enhancement during in situ epitaxial growth |
| 摘要 |
In situ removal of selected or patterned portions of quantum well layers is accomplished by photo induced evaporation enhancement to form quantum wire, patterned quantum wire and multiple quantum wires in a semiconductor structure.
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| 申请公布号 |
US5436191(A) |
申请公布日期 |
1995.07.25 |
| 申请号 |
US19940279143 |
申请日期 |
1994.07.22 |
| 申请人 |
XEROX CORPORATION |
发明人 |
PAELL, THOMAS L.;EPLER, JOHN E. |
| 分类号 |
H01L21/20;H01L21/205;H01L21/268;H01L29/06;H01L29/201;H01L29/80;H01S5/00;H01S5/34;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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