| 摘要 |
A room temperature high speed transistor that does not suffer deleterious effects from plasmon scattering. The transistor of the present invention comprises a semiconducting base region having a type of majority carriers and sub-band ordering associated with the majority carriers. The transistor further comprises a semiconducting collector region contacting the base region at a collector-base heterojunction, the semiconducting collector region having the same type of majority carriers as the semiconducting base region and having a sub-band ordering different than that of the base region. The transistor further comprises a semiconducting emitter region contacting the base region at an emitter-base heterojunction, the semiconducting emitter region having the same type of majority carriers as the semiconducting base region. In active operation of the transistor of the present invention, carriers are injected from a main sub-band in the emitter region into a satellite sub-band the base region. The carriers are then transported from the satellite sub-band in the base region to a main sub-band in the collector region. Intravalley scattering processes, including plasmon scattering, are not deleterious in the present invention because the carriers injected into satellite sub-band of the base region are successful collected in the main sub-band of the collector region independent of any energy lost through the intravalley scattering.
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