Shallow SIMOX processing method using molecular ion implantation

摘要

The invention provides a method of forming shallow SIMOX (Separation by IMplantation of OXygen) substrates by implantation of molecular oxygen ions (O2+), instead of implanting atomic oxygen ions (O+) as is done in prior art SIMOX processes. Use of molecular oxygen ions (O2+) doubles the yield of oxygen atoms implanted for each unit of electric charge deposited in the wafer. The resultant structure, after annealing, has a defect density which is not substantially different from SIMOX processing using atomic oxygen ions (O+). An alternative method for implanting molecular nitrogen ions is also disclosed.