发明名称 |
Semiconductor laser diode |
摘要 |
A semiconductor laser diode of a double hetero structure including a semiconductor substrate, a buffer layer, a clad layer of a first conductivity type, an active layer and a clad layer of a second conductivity type, all layers being sequentially formed over the substrate, characterized by an intermediate layer interposed at at least one of a region between the substrate and the first clad layer and a region between the second clad layer and the cap layer, the intermediate layer being adapted to reduce a series resistance component and thus make a flow of current smooth.
|
申请公布号 |
US5436466(A) |
申请公布日期 |
1995.07.25 |
申请号 |
US19930105791 |
申请日期 |
1993.08.12 |
申请人 |
GOLDSTAR CO., LTD. |
发明人 |
KO, HYUN C.;JUNG, KI W.;KIM, JONG S.;CHOI, WON J. |
分类号 |
H01S5/223;H01S5/32;(IPC1-7):H01L33/00 |
主分类号 |
H01S5/223 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|