| 摘要 |
PURPOSE:To enhance an amorphous photoelectric conversion device in conversion efficiency, especially fill factor, and open and voltage by a method wherein a first and a second substantially intrinsic semiconductor thin film are formed of amorphous silicon hydride. CONSTITUTION:An amorphous semiconductor solar cell structure is basically formed of a blue glass plate on which tin oxide is deposited. That is, a glass plate/tin oxide is made to serve as a substrate 110, and a P-type semiconductor layer 112, an I-type semiconductor layer 113, an N-type semiconductor layer 114, a P-type semiconductor layer 115, an I-type semiconductor layer 116, and an N-type semiconductor layer 117 are successively laminated. It is preferable for a second electrode layer 111 that a substantially intrinsic semiconductor thin film on which sunlight is incident contains 15 to 50atom% of combined hydrogen, also it is preferable that a second substantially intrinsic semiconductor thin film contains 0.5 to 15atom% of combined hydrogen, and a first and a second semiconductor layer, a first and a second N-type semiconductor layer, and a first and a second electrode are so arranged as to conform to the above constitution. |
