PHASE SHIFT MASK BLANK AND PHASE SHIFT MASK

摘要

PURPOSE:To obtain a halftone phase shift mask blank having a simple film structure with which accumulation of charges in an electron beam blotting and electrostatic electrification can be prevented, and to obtain a halftone phase shift mask using this blank as the material. CONSTITUTION:This halftone phase shift mask blank consists of a transparent substrate 1 with a translucent film 2a. The translucent film 2a is a film containing at least transition metals and silicon. The translucent film 2a of the phase shift mask blank is patterned by partly removing the film according to the specified pattern. Thus, the obtd. half-tone phase shift mask has a mask pattern comprising a transparent part 3 and a translucent part 2.