| 摘要 |
<p>PURPOSE:To lessen the number of manufacturing processes by setting the temperature of a high temperature plate at lowest the oxidizing temperature of a center metal of an organometal in a patterning process of an organometal thin film. CONSTITUTION:An organometal solution is applied to the whole surface of an insulating substrate 1 on which element electrodes 5, 6 are formed and the substrate is left still to form an organometal thin film 7. Then, a high temperature plate 8 having a patterned shape of an electron emitting part forming thin film 2 is brought into contact with or set near the film 7 and the film 7 is partly heated and fired. At that time, the temperature of the plate 8 is so set as to raise the temperature of the film 7 to at lowest the oxidizing temperature of the center metal and to form a fine particle film consisting of mainly the center metal and its oxide after the treatment. Then, after the organometal in not fired parts is removed by cleansing with an organic solvent, etc., and the film 2 with a desiring pattern is formed, electric communication treatment is carried out between the electrodes 5, 6 to form an electron emitting part 3 with a changed structure at the position where the film 2 is formed. As a result, the number of the manufacturing processes is remarkably lessened.</p> |
