| 摘要 |
PURPOSE:To provide a semiconductor device which is less changed in TFT characteristics by the effect of hydrogen or static charge of a protective film. CONSTITUTION:A wiring layer is formed so as to cover a TFT channel section. A silicon oxide 2 is formed on a semiconductor substrate 1, a polysilicon film is provided thereon through a CVD method and formed into a TFT gate electrode 3. A silicon oxide film 4 to serve as a TFT gate film is formed through a CVD method or a thermal oxidation method, then a polysilicon film serving as a TFT bulk section is formed, and ions are implanted using a resist film as a mask for the formation of a TFT channel section 5 and TFT source/drain sections 6 and 7. A PSG film 9 is formed through a CVD method. An aluminum film is formed through a sputtering method and patterned into an aluminum wiring layer 10 by etching through a photolithography method. An Al wiring layer is formed covering a TFT channel section. A plasma nitride film 11 is formed as a protective film through a CVD method. |
