| 摘要 |
PURPOSE:To prevent exfoliation of high melting point metal silicide by depositing polysilicon at a groove part caused by the level difference in a device and depositing a high melting point metal silicide thereon to provide a polycide structure at a contact part thereby forming a stable interface between the high melting point metal silicide and polysilicon. CONSTITUTION:A polysilicon layer 16 is deposited substantially planarly on a contact hoe 15 or other microtrench parts by LPCVD. It is then etched back to leave the polysilicon 16 only at a microtrench part 17 and a polysilicon layer 18 is deposited again by LPCVD. Subsequently, the polysilicon layer 18 and the polysilicon 16 in the microtrench 17 are implanted with phosphorus ions and subjected to heat treatment thus activating the impurities. Tungsten silicide 19 is then deposited on the polysilicon layer 18 by CVD thus forming a second polycide structure 20 where a high melting point metal silicide is deposited on polysilicon. |
