| 摘要 |
PURPOSE:To provide a semiponductor substrate on which electrodes having a perfect ohmic property can be formed and a method of manufacturing the substrate. CONSTITUTION:After a single-crystal silicon substrate 1 is prepared, a single- crystal silicon carbide layer 2 having a 3C structure is epitaxially grown on the substrate 1 and a carbon layer 3 is formed on the layer 2. After forming the layer 3, the layer 3 is heat-treated. As a result, the layer 3 is thermally oxidized and a thermal oxide layer 4 is formed. Then the layer 4 is removed by treating the layer 4 with an HF solution. Immediatdly after removing the layer 4, Ni electrode layers 5 are formed by using a vacuum evaporation method. When the currentvoltage characteristic between the layers 5 is checked, it can be recognized that the characteristic is completely linear. Therefore, the ohmic property of the layers 5 is perfect. |
