PREPARATION OF ELECTRONIC INTERCONNECTION STRUCTURE MINUTE PATTERN BY PHASE MASK LASER

摘要

PURPOSE: To provide a method for manufacturing an interconnection microstructure of an electric device which has few processing steps and does neither use an expensive device nor dangerous chemicals. CONSTITUTION: A first layer 12 made of dielectric material is formed on a base body 11, a metal layer 13 is formed on the first layer 12 made of dielectric material, a second layer 14a made of dielectric material is formed on the metal layer 13, a phase mask 16 having a predetermined phase pattern which defines a metal conductive pattern corresponding to an interconnection structure is provided at the upper part of the second layer 14 made of dielectric material and the second layer 14 made of dielectric material is processed by using the phase mask 16 to form the interconnection structure. Processing of the second layer 14 is performed by irradiation energy of exima laser 15 to the second layer 14a made of dielectric material through the phase mask 16 and by partially eliminating the second layer 14a.