SEMICONDUCTOR LASER DEVICE, AND MANUFACTURE OF SEMICONDUCTOR LASER DEVICE, AND INTEGRATED SEMICONDUCTOR LASER DEVICE

摘要

PURPOSE:To enable this device to be manufactured, using the vapor growth method excellent in film controllability with a uniform surface and enable this device to operate with the currents concentrated in the groove. CONSTITUTION:This device is equipped with a substrate 101 of a first conductivity type, a clad layer 102 of the first conductivity type, a current block layer 103, a V-groove stripe 104, an active layer 105, a clad layer 106 of a second conductivity type, a contact layer 107 of a second conductivity type, an electrode 109 corresponding to the first conductivity type, and a second electrode 108 corresponding to the second conductivity type.