| 摘要 |
PURPOSE:To provide a semiconductor device which shows rapid performance even when the pattem is made finer by forming gate electrode and a first conductivity type source/drain region in a semiconductor substrate, by forming a first conductivity type semiconductor film into a cone shape in the region and by forming an electrode wiring on the semiconductor film through compound of the semiconductor film. CONSTITUTION:A silicon film 17 of the same conductivity as a source/drain region 15 is formed inside a source/drain region of a MOSFET provided with a gate electrode 14 and a source/drain region 15 in a semiconductor substrate 11. As for a method for forming the N-type silicon film 17 into a cone shape, for example, polycrystalline silicon is epitaxially formed selectively inside a contact hole, and then, the N-type silicon film 17 is formed by ion implantation. An aluminum film 21 is provide on the silicon film 17 through a titanium silicide film 20. A MOSFET is completed by patterning the aluminum film 21. |
