| 摘要 |
PURPOSE:To cope with fine pitch, obtain mechanical strength, and enable three- dimensional connection in the vertical direction, by connecting the electrodes of devices by plating, after thin devices are stacked. CONSTITUTION:A retaining substrate 4 is bonded to a semiconductor device 10, which is thinned by polishing from the rear. The device is stacked on another device. After the upper layer retaining substrate 4 is eliminated, the lower layer electrode 6 is exposed by patterning and etching. The whole surface is coated with conductive material 20 for a plating electrode, and a mask pattern is formed so as to expose a part where plating connection is to be formed. A plated film is formed by dipping the device in plating solution while a current is applied to the electrode. The plated film is used as a mask, and the conductive material 20 for a plating electrode is etched. Thereby an electrode 2 of the upper layer device is connected with the electrode 6 of the lower layer device, so that connection between chips is realized.
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