发明名称 |
PATTERN FORMING METHOD |
摘要 |
PURPOSE:To stably form a pattern having high resolution and excellent in dry etching resistance. CONSTITUTION:A photosensitive layer contg. an arom. compd. is formed on a substrate and a photochemical reaction is allowed to take place in the photosensitive layer by patternwise exposing the layer with light having wavelength shorter than the max. wavelength of the 3rd absorption band of the absorption spectrum of the arom. compd. from the long wavelength side and longer than the max. wavelength of the 4th absorption band. The photosensitive layer is then heat-treated if necessary and it is developed to selectively remove or leave the exposed part of the photosensitive layer. |
申请公布号 |
JPH07181687(A) |
申请公布日期 |
1995.07.21 |
申请号 |
JP19940001807 |
申请日期 |
1994.01.13 |
申请人 |
TOSHIBA CORP |
发明人 |
GOKOCHI TORU;NAITO TAKUYA;ASAKAWA KOUJI;NAKASE MAKOTO |
分类号 |
G03F7/038;G03F7/039;G03F7/20;G03F7/30;H01L21/027;(IPC1-7):G03F7/20 |
主分类号 |
G03F7/038 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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