发明名称 PATTERN FORMING METHOD
摘要 PURPOSE:To stably form a pattern having high resolution and excellent in dry etching resistance. CONSTITUTION:A photosensitive layer contg. an arom. compd. is formed on a substrate and a photochemical reaction is allowed to take place in the photosensitive layer by patternwise exposing the layer with light having wavelength shorter than the max. wavelength of the 3rd absorption band of the absorption spectrum of the arom. compd. from the long wavelength side and longer than the max. wavelength of the 4th absorption band. The photosensitive layer is then heat-treated if necessary and it is developed to selectively remove or leave the exposed part of the photosensitive layer.
申请公布号 JPH07181687(A) 申请公布日期 1995.07.21
申请号 JP19940001807 申请日期 1994.01.13
申请人 TOSHIBA CORP 发明人 GOKOCHI TORU;NAITO TAKUYA;ASAKAWA KOUJI;NAKASE MAKOTO
分类号 G03F7/038;G03F7/039;G03F7/20;G03F7/30;H01L21/027;(IPC1-7):G03F7/20 主分类号 G03F7/038
代理机构 代理人
主权项
地址