| 摘要 |
PURPOSE: To provide an etching device which makes possible a high etching rate and is suitable for ITO exhibiting no defect of the prior art. CONSTITUTION: In a device for etching a thin layer on a glass substrate in the vacuum chamber, having a plasma source 12 arranged above a vacuum chamber 2, a substrate supporting member 5 facing the plasma source, and a high frequency source 8 connected with the substrate supporting member, Cl2 or Cl2 and H2 or CH4 can be fed as an etching gas into the vacuum chamber, and a processing gas pressure of 0.1 to 10μbar is adjustable. In this case, a high-frequency-bias supply device 7 of the substrate supporting member is adjustable regardless of the etching particle density. In addition, the plasma source is a device for etching a supplied thin layer by a separate high frequency source 16 having a proper adjustment network 17.
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