| 摘要 |
<p>PURPOSE: To step up a voltage efficiently at high speed by using a PN junction diode as a transmission means. CONSTITUTION: A diode connection bipolar transistor 26 is employed as means for transmitting a step-up voltage VPP generated through pumping. An input node 20 receiving an oscillation signal at a constant period, a pumping node 24 being precharged at a specified voltage level and a step-up node outputting a step-up voltage VPP are provided. Furthermore, a PN junction diode for transmitting a voltage generated at the pumping node 24 to the step-up node is provided. The PN junction diode is provided by forming a triple well structure through CMOS process thereby constituting a bipolar transistor 26. Since a bipolar transistor 26 constituting a PN junction diode is employed, excellent device characteristics are realized including enhancement of step-up efficiency.</p> |
