FABRICATING METHOD OF SEMICONDUCTOR DEVICE

摘要

The method includes the steps of depositing a HTO film (2) and a BPSG film (3) on the substrate (1) having a gate electrode (8) and source and drain layers (9,10), flowing the BPSG film (3) to etch the BPSG (3) on the drain region (10) to form a contact hole, depositing a TiSi2 film (14) as a contact layer thereon to deposit a tungsten layer (5) on the TiSi2 film (14) to form a metal wiring, and depositing and flowing a BPSG film (6) thereon, thereby using a contact layer (14) to relieve the thermal stress of tungsten to prevent voids from generating in the BPSG film (3).