| 摘要 |
<p>PURPOSE:To provide a plasma treatment device to suppress a deposition amount of particles to be deposited on the peripheral part of an element to be treated by suppressing progress of plasma treatment on the peripheral part of the treatment surface of the element to be treated by a covering element. CONSTITUTION:This is a plasma treatment device 1 where an element W to be treated is attracted and held in an electrostatic chuck mechanism arranged inside a treatment chamber 2 by Coulomb force, and plasma is generated inside the treatment chamber 2 so as to treat the element W to be treated, and this plasma treatment device is arranged between the element W to be treated and the sheath part of plasma while being provided with a covering element which covers the peripheral part of the treatment surface of the element W to be treated with non-contact performing no plasma treatment on the peripheral part of the treatment surface of the element W to be treated.</p> |
