FORMATION OF ANTI FUSE STRUCTURE BASED ON AMORPHOUS SILICON AND ANTI FUSE STRUCTURE BY THE FORMING METHOD,申请号JP19940198907-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	FORMATION OF ANTI FUSE STRUCTURE BASED ON AMORPHOUS SILICON AND ANTI FUSE STRUCTURE BY THE FORMING METHOD
摘要
申请公布号	JPH07183386(A)	申请公布日期	1995.07.21
申请号	JP19940198907	申请日期	1994.07.20
申请人	TEXAS INSTR INC <TI>	发明人	SHIYOUE - IEN WANGU
分类号	H01L21/28;H01L21/82;H01L21/822;H01L27/04;(IPC1-7):H01L21/82	主分类号	H01L21/28
代理机构		代理人
主权项
地址

您可能感兴趣的专利

Method and apparatus for generalized recursive least-squares process for battery state of charge and state of health

Game machine, server, and program

Methods for address and name discovery for Ethernet entities

Proxy addressing scheme for cable networks

Method and devices for dialling services

Method to form both high and low-k materials over the same dielectric region, and their application in mixed mode circuits

Optical waveguide having specular surface formed by laser beam machining

Synchronisation communication systems

Method for superimposing statistical information on tubular data

Fabrication process for increased capacitance in an embedded DRAM memory

Apparatus for coating a monolith support

Multidirectional pivoting bone screw and fixation system

Method of attaching a functional element; die; functional element; component assembly

Recombinant porcine adenovirus vector

Conductivity sensor and manufacturing method therefor

Magnetic resonance imaging receive chain with dynamic gain and wireless receiver coil

Model toy aircraft

Secure radio frequency identification device for identity booklet or object to be identified

Electrosurgical instrument

Thermal fuse using thermosensitive material