MONOLITHIC INTEGRATION LASER, LIGHT SOURCE FOR ELECTRONIC ABSORBER AND MANUFACTURE THEREOF

摘要

PURPOSE: To monolithically integrate and form a DFB or DBR laser and a modulator by using organic metal gas phase epitaxy, for a patternized board. CONSTITUTION: A selectively deposited GaInAsP layer 12, an InP layer 13, a confinement heterostructure layer 14 and a p-type InP layer 15 are formed, on a polished n-type InP substrate 11. This confinement heterostructure layer 14 and the p-type InP layer 15 are formed by growing a strained GaInAs quantum well having four barrier layers by organic metal gas phase epitaxy. A polyimide layer 18 is deposited selectively on this element, and blocks a current to a region where a modulator 19 and a laser 20 are not formed. A reflection preventing coating 21 is applied onto the cleaved surface of this element. Consequently, it becomes possible to manufacture high-efficiency elements wherein modulators and lasers are combined.