| 摘要 |
<p>PURPOSE:To accurately confirm the amount of misalignment of the mask of a mask pattern for forming an active region and that for forming an n-type diffusion layer region. CONSTITUTION:P-well region 42 is formed on silicon substrate 41, an element isolation region 43 is formed on P-well region 42, and n-type diffusion layer regions 44a, 44b, and 44c are formed at an element region separated by the element isolation region 43. The pattern pitch differs by 0.1mum or longer between the mask pattern for forming active region and that for forming n-type diffusion region. Therefore, assuming that the n-type diffusion layer region 44b is formed at a position where the amount of misalignment between the mask pattern for forming active region and that for forming n-type diffusion layer region is equal to 0, the n-type diffusion layer regions 44a and 44c are formed at a position which is deviated a pattern pitch difference between the mask pattern for forming active region and that for forming n-type diffusion layer region.</p> |
