| 摘要 |
PURPOSE: To provide an integrated circuit device having a power device and a low voltage device in which trouble due to the power device and the low voltage device can be avoided while decreasing the required area. CONSTITUTION: At least one power device is fabricated in a semiconductor substrate 1 with at least one contact part 11 of the power device being arranged on the major surface of the substrate 1. The contact part 11 is covered with an isolation layer 13 and at least one thin film device 14, 15, 16, 17, 18 is formed above the contact part 11 so that the contact part 11 shields the thin film device from a field generated in the substrate. |
