| 摘要 |
PURPOSE:To obtain a resist compsn. suitable for lithography which uses far UV rays or KrF excimer laser beams of short wavelength by incorporating a compd. which can produce acid with irradiation of active rays, polymer which changes into alkali-soluble due to opening reaction of groups in the presence of the acid, and phenol compd. CONSTITUTION:The compsn. contains a compd. which produces acid by irradiation of active rays, polymer, and phenol compd. The polymer has a structural unit having groups stable against acid and changes into alkali-soluble by opening reaction of groups in the presence of acid produced from the compd. above described. The compd. is selected from halogenated org. compds. The polymer consists of monomers selected from specified compds., monomers selected from styrene compds., acrylic acid compds., and copolymers. Thereby, the obtd. resist compsn. has excellent sensitivity, resolution, etching resistance, storage stability, tolerance for the process. Production of a hardly soluble layer on the surface is suppressed and the resist compsn. is especially suitable as a positive resist for fine working of semiconductor elements. |
