| 摘要 |
<p>PURPOSE:To provide a semiconductor storage device capable of correclty detecting potential of a bit line without occurring a difference in reference potential according to an odd numbered row and an even numbered row of a work line. CONSTITUTION:Memory cells MC connected to the work lines WL1, WL3... of the odd numbered row are different from the memory cells MC connected to the word lines WL2... of the even numbered row in a characteristic. A dummy cell DMC1 has the same characteristic as the memory cells MC connected to the word lines WL1, WL3... of the odd numbered row, and the dummy cell DMC2 has the same characteristic as the memory cells MC connected to the word lines WL2... of the even numbered row. The dummy cell DMC1 is selected together with the word line of the odd numbered row, and the dummy cell DMC2 is selected together with the word line of the even numbered row. Thus, the proper reference potential is supplied corresponding to the selected memory cell.</p> |
