发明名称 FIELD EMISSION TYPE ELECTRON SOURCE
摘要 <p>PURPOSE:To provide a field emission type electron source in which the resistance between a cathode and each emitter cone is kept to be almost constant and whose mounting density is improved. CONSTITUTION:A stripe-like cathode 2 is formed on an insulating substrate 1, window opening process is carried out in the cathode 2, a first resistor layer 3 and a second resistor layer 7 are formed in the opened window, and at the same time, an insulating layer 4 and a gate electrode 5 are formed on the layers. An open part is formed on the gate electrode 5 and the insulating layer 4 and emittor cones 6 are formed in the open part. The emission in the emitter cones (6-1)-(6-3) in the cathode region is uniformalized by making the resistance of the second resistor layer 7 lower than that of the first resistor layer 3.</p>
申请公布号 JPH07182966(A) 申请公布日期 1995.07.21
申请号 JP19930345609 申请日期 1993.12.22
申请人 FUTABA CORP 发明人 TAKAGI TOSHINORI;ITO SHIGEO;WATANABE TERUO
分类号 H01J1/30;H01J1/304;(IPC1-7):H01J1/30 主分类号 H01J1/30
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