| 摘要 |
<p>PURPOSE:To enable a silicon thin film which forms a thin film transistor to be set uniform in crystal structure so as to restrain the transistors from dispersing in characteristics. CONSTITUTION:First of all, a silicon thin film 2 is formed on all the surface of an insulating substrate 1 when a thin film transistor is formed as integrated. Then, the silicon thin film 2 is patterned into an element region 3 of prescribed planar shape. In succession, silicon ions are implanted into the element region 3 to turn the patterned silicon thin film 2 amorphous temporarily. The amorphous silicon thin film 2 is thermally treated to turn polycrystalline to enable crystal grains 11 to 15 to grow uniformly throughout all the element region 3. Lastly, a gate insulating film 4, a gate electrode 5, and a wiring electrode 7 are formed on the polycrystalline element region 3.</p> |
