发明名称 Assemblage de contact électrique à pression pour dispositif semi-conducteur
摘要 1,110,635. Semiconductor devices. WESTINGHOUSE ELECTRIC CORPORATION. 27 Jan., 1967 [1 Feb., 1966], No. 4112/67. Heading H1K. Contact is made to two different conductivity type regions on the same surface of a semiconductor device 76 by a pair of electrodes one of which has a tubular portion connected to one of the regions and the other of which is a lead 38 held in contact with the other region by a spring or like resilient member 42 situated within the tubular portion of said one electrode. The tubular electrode portion has an open (lower) end secured to an apertured plate 14 which is part of the contact system of the first region, and a closed (upper) end which provides support for the spring 42. The closure plate 20 at this end is integral with an offset lead portion 46 which provides a flexible link to the terminal 44. A spring system 100 urges the plate 14 on to the semi-conductor so that both the above contacts are of the pressure-held kind, as also is the contact between the device and the base of the device housing 50.
申请公布号 FR1509774(A) 申请公布日期 1968.01.12
申请号 FR19670093263 申请日期 1967.01.31
申请人 WESTINGHOUSE ELECTRIC CORPORATION 发明人
分类号 H01L23/48 主分类号 H01L23/48
代理机构 代理人
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