| 摘要 |
A semiconductor device has an input terminal (1), an input protective device (3), a first stage circuit (4) connected between the input terminal and an internal circuit (5), and a ground line system including a plurality of ground lines (GND1-GND3) divided for noise suppression. Ground nodes of the protective circuit and the internal circuit are connected with each other and to a common first ground line (2), while the ground nodes of the internal circuit (5) are connected to a second and third ground lines. The parasitic resistance formed between the ground nodes for the protective device and for the first stage circuit is reduced, thereby providing a surge voltage not higher than a clam voltage of the protective device to protect the first stage circuit against electrostatic discharge-induced failure. <IMAGE> |
