| 摘要 |
1,182,707. Semi-conductor rectifiers. GENERAL ELECTRIC CO. 5 Oct., 1967 [26 Oct., 1966], No. 45598/67. Heading H1K. An integrated bridge rectifier circuit assembly comprises, for three phases, a pair of semiconductor pellets one 25 of which is of N-type material having P-type regions 27, 28, 29, formed in one surface and the other 26 of P-type material having N-type regions 30, 31, 32, formed in one surface. An electrode 14 is connected to the N-type material of the former pellet and an electrode 13 is connected to the P-type material of the latter pellet to form D.C. terminals, and separate individual electrodes 33, 34, 35 are each connected between one of the P-type regions 27, 28, 29 of pellet 25 to a corresponding one of the N-type regions 30, 31, 32 of pellet 26 to form A.C. terminals 10, 11, 12. The pellets are of silicon and are mounted directly on to metallized areas 24, 23 in contact with electrodes 14 and 13 respectively. All the elements are assembled on a supporting base 22 of beryllium oxide. The device may be enclosed in a housing or may be sealed in epoxy or potting compound. In either case it may be mounted on to a further heat sink by a threaded connection or the use of solder or heat conductive glue. In the case of a single phase rectifier, only two instead of three regions are formed in the pellets. |
