An ashing method for removing an organic film on a substance of a semiconductor device under fabrication.

摘要

Plasma ashing methods, each for removing a resist material (10) formed on a ground layer (9) of a semiconductor device (8) under fabrication, are performed by using three kinds of reactant gases each composed of three different gases. The plasma ashing is performed: in an ashing rate of 0.5 mu m/min at 160 DEG C and with activation energy of 0.4 eV when a reactant gas composed of oxygen, water vapor and nitrogen is used; in an ashing rate of 0.5 mu m/min at 140 DEG C, with activation energy of 0.38 eV and without etching the ground layer (9) when a reactant gas composed of oxygen, water vapor and tetrafluoromethane is used; and in an ashing rate of 0.5 mu m/min at 140 DEG C, with activation energy of 0.4 eV when a reactant gas composed of oxygen, hydrogen and nitrogen is used. <IMAGE>