发明名称 Substrate for epitaxy and epitaxy using the substrate
摘要 A substrate wafer for epitaxy of a compound semiconductor single crystal and an epitaxy using the substrate wafer are disclosed. Where the orientation off-angle from the <100> plane of an area available for device formation of a surface of the substrate wafer is theta DEG , and the growth rate on an epitaxial layer on the substrate wafer is V mu m/hr, and the growth temperature of the epitaxial layer is T K, the orientation off-angle theta DEG is given by the following expression: <IMAGE> where 0.1</=V</=10 and 853</=T</=1023. The substrate wafer is capable of significantly reducing the number of teardrop-like hillock defects which appear on the surface of the epitaxial layer and of increasing the smoothness of the surface of the epitaxial layer.
申请公布号 US5434100(A) 申请公布日期 1995.07.18
申请号 US19930051335 申请日期 1993.04.23
申请人 JAPAN ENERGY CORPORATION 发明人 NAKAMURA, MASASHI;KATSURA, SHIGEO;HIRANO, RYUICHI;MAKINO, NOBUHITO;IKEDA, EIJI
分类号 C30B25/16;C30B25/02;C30B25/18;C30B29/40;H01L21/20;H01L21/205;(IPC1-7):H01L21/20 主分类号 C30B25/16
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