Apparatus for plasma treatment using electron cyclotron resonance
摘要
A plasma treatment apparatus for forming a thin film on a substrate in a vacuum vessel includes a magnetic field generator which can be positioned inside or outside the vacuum vessel, and a microwave source. The magnetic field strength is controllable such that an electron cyclotron resonance (ECR) area is defined near the substrate. The magnetic field generator can be arranged so that plasma and reactive gas introduction ports are on the microwave introduction side of the ECR area and the substrate is on the opposite side of the ECR area. Alternatively, a gas introduction port can be positioned such that reactive gas is introduced into the ECR area or onto the substrate.
申请公布号
US5433788(A)
申请公布日期
1995.07.18
申请号
US19930131519
申请日期
1993.10.04
申请人
HITACHI, LTD.;HITACHI SERVICE ENGINEERING CO., LTD.