| 摘要 |
The present invention relates to a method of producing a semiconductor substrate which is suitable for an electronic device or an integrated circuit in the form of dielectric separation or having a single crystal semiconductor layer formed on an insulator. The method comprises the steps of making a silicon substrate porous, forming a silicon single crystal on the porous substrate and oxidizing the porous silicon substrate to form a semiconductor layer having good crystallinity on an insulating support, particularly a support having light transmission.
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