发明名称 |
Process for fabricating layered superlattice materials and making electronic devices including same |
摘要 |
A liquid precursor containing a metal is applied to a substrate, RTP baked, and annealed to form a layered superlattice material. Prebaking the substrate and oxygen in the RTP and anneal is essential, except for high bismuth content precursors. Excess bismuth between 110% and 140% of stoichiometry and RTP temperature of 725 DEG C. is optimum. The film is formed in two layers, the first of which uses a stoichiometric precursor and the second of which uses an excess bismuth precursor. The electronic properties are so regularly dependent on process parameters and material composition, and such a wide variety of materials are possible, that electronic devices can be designed by selecting from a continuous record of the values of one or more electronic properties as a continuous function of the process parameters and material composition, and utilizing the selected process and material composition to make a device.
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申请公布号 |
US5434102(A) |
申请公布日期 |
1995.07.18 |
申请号 |
US19930065656 |
申请日期 |
1993.05.21 |
申请人 |
SYMETRIX CORPORATION;OLYMPUS OPTICAL CO., LTD. |
发明人 |
WATANABE, HITOSHI;PAZ DE ARAUJO, CARLOS A.;YOSHIMORI, HIROYUKI;SCOTT, MICHAEL C.;MIHARA, TAKASHI;CUCHIARO, JOSEPH D.;MCMILLAN, LARRY D. |
分类号 |
B05D1/00;B05D3/04;B05D7/24;C23C16/44;C23C16/448;C23C16/455;C23C16/46;C23C16/48;C23C16/52;C23C18/12;C23C26/02;C30B7/00;H01C7/10;H01L21/02;H01L21/314;H01L21/316;H01L27/108;H01L27/115;H01L41/24;H05K3/10;(IPC1-7):H01L21/385 |
主分类号 |
B05D1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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