| 发明名称 |
Method for controlling electrical breakdown in semiconductor power devices |
| 摘要 |
A field-effect, power-MOS transistor wherein a region under the gate contact pad is specially doped with a dopant that is electrically compatible with that in the transistor's channel to obviate problems of electrical breakdown in that region.
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| 申请公布号 |
US5434095(A) |
申请公布日期 |
1995.07.18 |
| 申请号 |
US19930030797 |
申请日期 |
1993.03.12 |
| 申请人 |
SUNDSTRAND CORPORATION |
发明人 |
HOLLINGER, THEODORE G. |
| 分类号 |
H01L23/485;H01L29/08;H01L29/10;H01L29/423;H01L29/78;(IPC1-7):H01L21/265 |
主分类号 |
H01L23/485 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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