| 摘要 |
PURPOSE:To provide a light emitting diode that can be prepared by one cycle of epitaxial growth, wherein resistance will not be increased and a high quality DBR is obtained even if the DBR is formed between a GaAs substrate and a lower cladding layer, and wherein external projection efficiency will be improved by reducing luminescence under an electrode. CONSTITUTION:A DBR (Distributed Bragg Reflector) 2 is formed on a GaAs substrate 1, and a contact layer 10 of a first conductivity type, a lower cladding layer 3 of the first conductivity type, an undoped active layer 4, an upper cladding layer of a second conductivity type and a contact layer 5 of the second conductivity type, are formed on the DBR 2 in this order. The layers in the DBR 2 are undoped. Or, only several upper layers are of the first conductivity type. The layers above the contact layer 10 of the first conductivity type are formed in a way that the periphery of the contact layer 10 of the first conductivity type is exposed. An electrode 9 of the first conductivity type is formed on the exposed portion. |
