| 摘要 |
PURPOSE:To obtain a semiconductor memory which can surely read and write data even when a memory cell is more miniaturized, and a writing and reading method for data in the semiconductor memory. CONSTITUTION:A memory cell MC comprises a storage node SN which holds a high potential VH or a low potential VL indicating a binary signal, a writing transistor Q1, and a reading transistor Q2. When data is read out, after a read- out bit line BL1' is previously charged, a potential of a read-out word line WL1' is dropped and a threshold value of the transistor Q2 is varied, the transistor Q2 is turned on or off in accordance with the potential VH or VL of the storage node SL. The potential VH or VL of the storage node SN is discriminated by detecting a current flowing the read-out bit line BL1' by a sense amplifier S/A1. |
