| 摘要 |
PURPOSE:To enhance long term reliability by reducing the leakage current of an ultrathin capacitor insulating film in a DRAM, for example. CONSTITUTION:A step for removing spontaneous oxides through heat treatment and a step for depositing a silicon nitride 9 by low pressure vapor phase epitaxial growth are carried out continuously in SiH4 gas for removing a spontaneous oxide 8 from the surface of polysilicon deposited on a lower layer electrode 7. This method allows deposition of a capacitor insulating film accompanied with no spontaneous oxide on the interface between the polysilicon 7 and the silicon nitride 9. |
